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The most compact and lowest cost of deep UV (224nm or 246.8nm). Measurement of photoluminescence (PL) spectra from semiconductor materials is an important characterization method and is widely accepted for providing information on carrier doping levels

Room temperature PL and Raman 5.5 (224nm) or 5.0 eV (248.6nm) laser excitation Measurement of excitation and emission energy for direct QE measurement Highly portable 15x18x36cm, <8kg High-resolution 0.2nm (multi slits included) Computer controlled g

Using an ultraviolet spectroscopies, this is particularly useful in the characterization of semiconductor materials and can provide information directly related to the optical properties of the sample.