Laboratory Equipment & Services Information System by Centralized Laboratory Management Office (CeLMO)

The model SR4338KS‐R(HT) is a high performance MOCVD equipment used for epitaxy growth of GaN‐based materials (GaN, AlGaN and InGaN). The equipment consists of source material supply control system which includes 8 metal‐organis (MO) line systems, 3 hydride line systems, a horizonal reactor with a glove‐box + a passbox, a resistance heating system (Max 1300°C), a vacuum pumping system, a full safety system, and a computer measuring and control system. 1.2 Specifications: The system is capable of producing high quality, high uniformity III‐V Nitrates semiconducting epitaxial layers or structures on 2” and 4” substrates for a variety of device applications. • MAX 4inch wafer • 8 metal‐organic (MO) line systems ‐ (1‐TMG, 2‐TMA, 2‐Cp2Mg, 1‐TEG, 2‐TMI) • Horizontal flow laminar reactor • A resistance heating system (400‐1300oC), two resistance heaters that are surrounded by a boron‐nitride‐reflector heat the susceptor. • Suitable for visible and depth UV growth.

Software Used: Mocvd.xlsm, FA‐Studio, FA_Trend

SR4338KS‐R(HT)