Laboratory Equipment & Services Information System by Centralized Laboratory Management Office (CeLMO)

The ULTECH SEE-5S e-beam (metals) system is a cryo-pump thin films evaporator with a 6 kW power supply, 6 pockets of e-beam sources. The e-beam system has 270° beam deflection and a new magnetic field design. This provides a much straighter beam path through the melt material, thus can increase the usable portion of the melt inventory and produces a more uniform and predictable evaporant cloud. The SEE-5S (Metal) is used for evaporating high purity metals, such as Al, Au, Ni, Cr, Pt, Ti, Pt, etc. The system has a planetary substrate holder which suitable for any sample size up to 4-inch diameter. The system has 6 pockets for e-beam sources and also has a Telemark Model 861 controller that allows for fully automated programming of multiple layers deposition. SYSTEM FEATURES • Automatic pumping mode: Genesis Cryopump with water-cooled compressor which can reach ~ 1e-7 ultimate base pressure. • Pumping speed: 40,000 l/sec for H2O, 14,000 l/sec for air, 30,000 l/sec for H2, 12,000 l/sec for Ar. • Electron beam source: Six 15 cc e-beam source pockets with Telemark (Model 266-12) controller. • Electron beam power supply: Telemark (Model TT-6) DC power supply with digital sweep. The voltage supply is from 6 to 8 kV and the max. beam current is 0.75 A. • Deposition Control: Telemark model 861, 99 processes of up to 999 layers each for automatic or manual deposition control based on a resonating quartz crystal sensor, 0.03 Hz and 0.1 sec measurement interval. • Automatic deposition of multiple layers stack. • Planetary substrate holder: Up to five pieces of 4" wafers in one run with 1~30 rpm rotation speed. • Substrate heating: Halogen lamp with max. temp. of 400°C and equipped with K-type TC. APPLICATION This system is used for depositing single or multiple layer of various metals on various substrates such as glass, polymer, semiconductors, etc. For electronic and optoelectronic applications, it is widely used for depositing Ohmic contacts, Schottky contacts, bond pads, and etc. For each run/deposition, the maximum thickness of deposition layers is limited to 1 micron.